High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al₂O₃ Nanolaminate Structure Processed at Room Temperature.

Materials (Basel) · 2018 · PMC6213881 · PMID 30275382

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a significant trendno p-value reported

A significant trend can be found that the device performance increased at first, but then degraded as the Nd:IZO thickness increased from 3 to 10 nm.

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