Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si_1-x-yGe_xSn_y Thin Films with Boron Ion Implantation.

One can see a clear trend that the peak intensity increases with the RTA temperature, but the 1100 °C-RTA sample is an inflection point, the peak intensity becomes weak instead in the 1150 °C-RTA sample which indicates that polycrystalline Si 1-x-y Ge x Sn y thin film be synthesized well only at an appropriately high RTA condition at 1100 °C for 15 seconds in our samples.

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