Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels.

ACS Omega · 2019 · PMC6906765 · PMID 31858043

Europe PMC DOI

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closest p

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a clear trendno p-value reported

A clear trend toward increased V th with increased chromium concentration has been observed, accompanied by a saturation current decrease of about 60% at the high chromium concentrations.

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