Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements.

Sci Rep · 2019 · PMC6934866 · PMID 31882667

Europe PMC DOI

hedged sentence

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closest p

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boldest claim

The sentences

a clear trendno p-value reported

4(b) ), while the non-radiative lifetime does not exhibit a clear trend vs . temperature (see Eq. 7 and Fig. 5(b) ) at high carrier densities.

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