Various characteristics, such as scratch force, depth, and specific energy for each representative scratch direction on the c-plane of sapphire, were manifested by the FFM, and the results of the specific scratch energy showed a trend of six-fold symmetry on taking lower values than those of the other scratch directions when the scratch directions correspond to the basal slip directions as 0001 〈 11 2 ̄ 0 〉 .
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Analysis of Nanoscratch Mechanism of C-Plane Sapphire with the Aid of Molecular Dynamics Simulation of Hcp Crystal.
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