Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition.

Here, a clear trend toward a negative shift of the Dirac gate voltage (from −40 to −70 V) could be attributed to the increase in electron density distribution with increasing N doping concentration. 42 From the transfer characteristics of the devices, the electron and hole mobilities were extracted by estimating the linear region of I sd – V bg curves using equation 62 μ = ( l / wC ox V sd )/(Δ I sd /Δ V bg ), where l and w are the channel length (50 μm) and width (50 μm), respectively, and C ox is the gate oxide capacitance per unit area (ca. 69.02 nF cm –2 ) for the 500 nm thick SiO 2 layer.

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The concentration of atomic N shows an increasing trend with the values of 1.42, 3.60, and 7.17 at.% for the 0.125, 0.1875, and 0.25 of NH 3 /Ar ratios, respectively.

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