PO <sub><i>x</i></sub> /Al<sub>2</sub>O<sub>3</sub> Stacks for c-Si Surface Passivation: Material and Interface Properties.

The formation of less AlPO 4 could then already explain the higher D it at the higher deposition temperatures. However, at T ann ≥ 300 °C there are no additional structural changes observed in the infrared spectra for PO x /Al 2 O 3 stacks deposited at T dep = 100 °C ( Figure 7 a), while quite significant changes in passivation quality could be observed in the annealing range T ann = 300–500 °C (see Figure 2 ).

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