High quality N-polar GaN films grown with varied V/III ratios by metal-organic vapor phase epitaxy.

A slight linewidth narrowing of BEs can be seen from Sample A to F, implying a decreasing trend of the free carrier density. 18 Beside the dominant BEs, one sees broad side-luminescence (SL) bands covering the blue and yellow luminescence from 430–640 nm for all samples.

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One can see a clear trend of 3D-island coalescence as the growth proceeded.

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