Such a result is quite significant, since it opens up to the possibility, having Ga cells with appropriately different incidence angles, of achieving fine control over the NW geometry and probably also over the NW crystal structure, by quickly modifying the amount of the incident Ga flux and therefore the amount of Ga supplying the droplet. 5.
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Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111).
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