Edge-Contact MoS<sub>2</sub> Transistors Fabricated Using Thermal Scanning Probe Lithography.

ACS Appl Mater Interfaces · 2022 · PMC9501915 · PMID 36070441

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a clear trendno p-value reported

In the case of Cr/Au contacts, a clear trend shows that top-contact devices present the highest contact resistance independently of the number of layers, which is most likely due to contamination between the electrode metal and the 2DM.

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