Barely Significant
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Mixed-Substituted Single-Source Precursors for Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub> Thin Film Deposition.

Inorg Chem · 2022 · PMC9627566 · PMID 36260357

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quite significantno p-value reported
23 This type of Stranski–Krastanov growth typically requires temperatures of ∼550–600 °C, and it can result in quite significant Si/Si 1– x Ge x intermixing at the interface.

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