Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation.

Nanomaterials (Basel) · 2023 · PMC9964514 · PMID 36839025

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a clear trendno p-value reported

Nevertheless, these measurements show a clear trend towards more damage at higher ion energies, similar to results of laterally uniform implantations [ 20 ]. 3.3.

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